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A laser diode, or LD, is an electrically pumped semiconductor laser in which the active laser medium is formed by a p-n junction of a semiconductor diode similar to that found in a light-emitting diode. The laser diode is the most common type of laser produced with a wide range of uses that include fiber optic communications, barcode readers, laser pointers, CD/DVD/Blu-ray Disc reading and recording, laser printing, laser scanning and increasingly directional lighting sources. ==Theory of operation== A laser diode is electrically a P-i-n diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-heterostructure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation. Unlike a regular diode, the goal for a laser diode is to recombine all carriers in the I region, and produce light. Thus, laser diodes are fabricated using direct bandgap semiconductors. The laser diode epitaxial structure is grown using one of the crystal growth techniques, usually starting from an N doped substrate, and growing the I doped active layer, followed by the P doped cladding, and a contact layer. The active layer most often consists of quantum wells, which provide lower threshold current and higher efficiency. Laser diodes form a subset of the larger classification of semiconductor ''p''-''n'' junction diodes. Forward electrical bias across the laser diode causes the two species of charge carrier – holes and electrons – to be "injected" from opposite sides of the ''p''-''n'' junction into the depletion region. Holes are injected from the ''p''-doped, and electrons from the ''n''-doped, semiconductor. (A depletion region, devoid of any charge carriers, forms as a result of the difference in electrical potential between ''n''- and ''p''-type semiconductors wherever they are in physical contact.) Due to the use of charge injection in powering most diode lasers, this class of lasers is sometimes termed "injection lasers," or "injection laser diode" (ILD). As diode lasers are semiconductor devices, they may also be classified as semiconductor lasers. Either designation distinguishes diode lasers from solid-state lasers. Another method of powering some diode lasers is the use of optical pumping. Optically pumped semiconductor lasers (OPSL) use a III-V semiconductor chip as the gain medium, and another laser (often another diode laser) as the pump source. OPSL offer several advantages over ILDs, particularly in wavelength selection and lack of interference from internal electrode structures.〔(M. Arrigoni, et. al., "Optically Pumped Semiconductor Lasers: Green OPSLs poised to enter scientific pump-laser market" ), OptoIQ (2009). 〕〔("Optically Pumped Semiconductor Laser (OPSL)" ), Sam's Laser FAQs.〕 When an electron and a hole are present in the same region, they may recombine or "annihilate" producing a spontaneous emission — i.e., the electron may re-occupy the energy state of the hole, emitting a photon with energy equal to the difference between the electron's original state and hole's state. (In a conventional semiconductor junction diode, the energy released from the recombination of electrons and holes is carried away as phonons, i.e., lattice vibrations, rather than as photons.) Spontaneous emission below the lasing threshold produces similar properties to an LED. Spontaneous emission is necessary to initiate laser oscillation, but it is one among several sources of inefficiency once the laser is oscillating. The difference between the photon-emitting semiconductor laser and a conventional phonon-emitting (non-light-emitting) semiconductor junction diode lies in the type of semiconductor used, one whose physical and atomic structure confers the possibility for photon emission. These photon-emitting semiconductors are the so-called "direct bandgap" semiconductors. The properties of silicon and germanium, which are single-element semiconductors, have bandgaps that do not align in the way needed to allow photon emission and are not considered "direct." Other materials, the so-called compound semiconductors, have virtually identical crystalline structures as silicon or germanium but use alternating arrangements of two different atomic species in a checkerboard-like pattern to break the symmetry. The transition between the materials in the alternating pattern creates the critical "direct bandgap" property. Gallium arsenide, indium phosphide, gallium antimonide, and gallium nitride are all examples of compound semiconductor materials that can be used to create junction diodes that emit light. In the absence of stimulated emission (e.g., lasing) conditions, electrons and holes may coexist in proximity to one another, without recombining, for a certain time, termed the "upper-state lifetime" or "recombination time" (about a nanosecond for typical diode laser materials), before they recombine. A nearby photon with energy equal to the recombination energy can cause recombination by stimulated emission. This generates another photon of the same frequency, polarization, and phase , travelling in the same direction as the first photon. This means that stimulated emission will cause gain in an optical wave (of the correct wavelength) in the injection region, and the gain increases as the number of electrons and holes injected across the junction increases. The spontaneous and stimulated emission processes are vastly more efficient in direct bandgap semiconductors than in indirect bandgap semiconductors; therefore silicon is not a common material for laser diodes. As in other lasers, the gain region is surrounded with an optical cavity to form a laser. In the simplest form of laser diode, an optical waveguide is made on that crystal's surface, such that the light is confined to a relatively narrow line. The two ends of the crystal are cleaved to form perfectly smooth, parallel edges, forming a Fabry–Pérot resonator. Photons emitted into a mode of the waveguide will travel along the waveguide and be reflected several times from each end face before they exit. As a light wave passes through the cavity, it is amplified by stimulated emission, but light is also lost due to absorption and by incomplete reflection from the end facets. Finally, if there is more amplification than loss, the diode begins to "lase". Some important properties of laser diodes are determined by the geometry of the optical cavity. Generally, the light is contained within a very thin layer, and the structure supports only a single optical mode in the direction perpendicular to the layers. In the transverse direction, if the waveguide is wide compared to the wavelength of light, then the waveguide can support multiple transverse optical modes, and the laser is known as "multi-mode". These transversely multi-mode lasers are adequate in cases where one needs a very large amount of power, but not a small diffraction-limited beam; for example in printing, activating chemicals, or pumping other types of lasers. In applications where a small focused beam is needed, the waveguide must be made narrow, on the order of the optical wavelength. This way, only a single transverse mode is supported and one ends up with a diffraction-limited beam. Such single spatial mode devices are used for optical storage, laser pointers, and fiber optics. Note that these lasers may still support multiple longitudinal modes, and thus can lase at multiple wavelengths simultaneously. The wavelength emitted is a function of the band-gap of the semiconductor material and the modes of the optical cavity. In general, the maximum gain will occur for photons with energy slightly above the band-gap energy, and the modes nearest the peak of the gain curve will lase most strongly. The width of the gain curve will determine the number of additional "side modes" that may also lase, depending on the operating conditions. Single spatial mode lasers that can support multiple longitudinal modes are called Fabry Perot (FP) lasers. An FP laser will lase at multiple cavity modes within the gain bandwidth of the lasing medium. The number of lasing modes in an FP laser is usually unstable, and can fluctuate due to changes in current or temperature. Single spatial mode diode lasers can be designed so as to operate on a single longitudinal mode. These single frequency diode lasers exhibit a high degree of stability, and are used in spectroscopy and metrology, and as frequency references. Single frequency diode lasers classed as either distributed feedback (DFB) lasers or distributed Bragg reflector (DBR) lasers. Due to diffraction, the beam diverges (expands) rapidly after leaving the chip, typically at 30 degrees vertically by 10 degrees laterally. A lens must be used in order to form a collimated beam like that produced by a laser pointer. If a circular beam is required, cylindrical lenses and other optics are used. For single spatial mode lasers, using symmetrical lenses, the collimated beam ends up being elliptical in shape, due to the difference in the vertical and lateral divergences. This is easily observable with a red laser pointer. The simple diode described above has been heavily modified in recent years to accommodate modern technology, resulting in a variety of types of laser diodes, as described below. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「laser diode」の詳細全文を読む スポンサード リンク
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